Samsung Electronics Introduces World’s First 1 Terabyte 3D V-NAND Flash Memory

Efe Udin
Aug 12, 2017

The Flash Memory Summit 2017 was held at the Santa Clara Convention Center from August 8 to August 10 during which Samsung unveiled the 1 terabyte (Tb) 3D V-NAND flash memory. This memory is the Next Generation Small Form Factor (NGSFF) Solid State Drive (SSD) that can increase the degree of integration of a server system. NGSFF SSD is a new standard that can maximize the use of space of a storage device within a server system. It is believed that we will have the SSD that is applied with 1Tb V-NAND flash memory before the end of 2018.

The idea behind NGSFF SSD is to drastically improve the storage capacity of any system. For instance, the storage capacity of an M.2 SSD system will be improved four times if it is replaced with NGSSF SSD. Mass production of NGSFF SSD will commence in the last quarter of this year while it is expected that the standardization organization (JEDEC) will standardize it by the first quarter of 2018.

Recall that Z-SSD was first introduced by Samsung for the first time during last year’s Flash Memory Summit and presently, discussions are already underway to attract partners. In comparison with NVMe (Non-Volatile Memory express), Z SSD's read latency time is 15µs (7 times faster) and can be up to 12 times faster in an environment where reading and writing are repeated. This new SSD (Key Value SSD) is specialized in storing data and the conversion process on the current SSD is not necessary (current SSDs have to convert data into particular size when storing data) thus it is possible to increase the lifespan of SSDs and input/output speed since a variety of data can be stored.

The Department Head (Vice-President), Jin Kyo-young of Samsung Electronics Memory Business Department said

“We are going to respond to demands for high-tech semiconductors such as AI (Artificial Intelligence) and Big Data in the future by continuously developing solutions related to V NAND.,”

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