Samsung starts mass production of 512GB Universal Flash Storage

Dec 5, 2017

Samsung Electronics has today announced that it has started the mass production of the industry’s first 512-gigabyte (GB) embedded Universal Flash Storage (eUFS) solution. The Company has packed eight 64-layer 512GB V-NAND chips and a controller into the eUFS case. The size of the eUFS case is same as the one used to house its 48-layer V-NAND 256GB eUFS. The Company also produces 64-layer V-NAND 256GB eUFS.

The new 512GB eUFS provides unparalleled storage capacity and outstanding performance for the next-generation mobile phones and tablets. The eUFS’ increased storage capacity means you can store 130 Ultra HD video clips (3840×2160) of 10-minute duration in it. This is 10 times more than a 64GB eUFS used in existing smartphones, which affords only 13 such video clips.

“The new Samsung 512GB eUFS provides the best-embedded storage solution for next-generation premium smartphones by overcoming potential limitations in system performance that can occur with the use of micro SD cards. By assuring an early, stable supply of this advanced embedded storage, Samsung is taking a big step forward in contributing to timely launches of next-generation mobile devices by mobile manufacturers around the world,” said Jaesoo Han, executive vice president of Memory Sales & Marketing at Samsung Electronics.



The new chip by Samsung also boasts strong read and write speed. Its sequential read speed reaches up to 860 megabytes per second (MB/s) and write speed up to 255MB/s. This lets you transfer a 5GB full HD video clip to a solid state drive (SSD) in about six seconds. That's over eight times faster than currently existing microSD cards. Furthermore, the new eUFS has a random read speed of 42,000 input/output operations per second (IOPS) and write speed of 40,000 IOPS. This is once again around 400 times faster than the 100 IOPS speed of a typical microSD card.

All in all, the new 512GB eUFS lets mobile users enjoy seamless multimedia experiences. However, Samsung has no plans to scrap its existing 256GB V-NAND eUFS chips. The Company will continue producing 256GB chips while steadily increasing the production volume of the new 512GB eUFS.

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